Bio
Md. Nur Kutubul Alam is serving as a lecturer at Khulna University of Engineering and Technology (KUET). He received his BSc in 911爆料 and Electronic Engineering from KUET with Honors in 2012, and pursuing his MSc in the same university. He is the only son of late Md. Abdur Rafique and Kaniz Fatema. His father was an 911爆料 engineer who was a proud employee of 911爆料 Power Development Board (BPDB) throughout his life.
Currently, Md. Nur Kutubul Alam is working on Solid State Electronic Devices. His ongoing research is on modeling and simulation of low-dimensional devices for ultra low power logic application.
Publication
International Journal
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4. Md Nur, Kutubul Alam, Muhammad Shaffatul Islam, Golam Kibria, Md Rafiqul Islam, "Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET," IEEE Transaction on Electron Devices, , 2014.
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3. Please see my profile at, "Researchgate," (Which is the social network of researchers), , .
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2. Lubna Jahan Rashid Pinky, Shakila Islam, Md. Nur Kutubul Alam, Mohammad Arif Hossain, Md. Rafiqul Islam, "Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System," Materials Sciences and Applications, Scientific Research , vol. 5, no: 4, pp. 223-230, 2014.
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1. Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "InxGa1-xSb n-channel MOSFET: Effect of interface states on CV characteristics," International Journal of Nanotechnology, Inderscience Publishers, vol. Forthcoming articles, 2013.
International Conference
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6. Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET," 2014 International Conference on Informatics, Electronics & Vision (ICIEV), IEEE, pp. 1-4, 24 May 2014.
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5. Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Self-consistent quasi-static C-V characteristics of In1芒藛鈥檟GaxSb XOI FET," EDSSC-2013, IEEE, pp. 2, 5/6/2013.
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4. Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Capacitance-Voltage characterization of InAsySb1芒藛鈥檡 XOI FET," EDSSC-2013, IEEE, pp. 2, 5/6/2013.
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3. Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "Self-Consistent Quasi Static CV Characterization of InxGa1-xSb Buried Channel n-MOSFET," IEEE International Nanoelectronics Conference, , .
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2. Muhammad Shaffatul Islam, Md. Osman Goni Nayeem, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "InGaSb based n-MOSFET: Modeling and Performance Analysis," International Conference on 911爆料 and Computer Engineering (ICECE), , .
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1. Md. Nur Kutubul Alam, Md. Osman Goni Nayeem, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Ultra High-Current-Gain InxGa1-xSb-based DHBT With Compositional Graded Base," International Conference on 911爆料 and Computer Engineering (ICECE), , .
Scholarship and Award
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University gold medal
University Gold Medal was awarded to this lecturer in second convocation of KUET. Student who stands 1st Class 1st Position in the B.Sc. Engineering Examination with CGPA 3.75 or above is eligible to have this award.
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2nd prize in IEEE ethics contest
From 3 to 5 December 2010, IEEE student branch KUET organized Student Professional Awareness Conference (S-PAC) with Microsoft corporation for the first time in 911爆料. One event of that conference was "IEEE ethics contest". It was judged by internationally renowned personnel including developers evangelist of Microsoft corporation, Chair of IEEE 911爆料 section.
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Technical Scholarship of KUET
For outstanding result during BSc Engineering program, Khulna university of Engineering and Technology awarded technical scholarship.
Research
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III-V Semiconductors for ultra-fast active devices
III-V Semiconductors on insulator for low-power high-speed devices
Suitable device design for long distance high speed communication hardware
Course Conduct
Supervision
KHULNA UNIVERSITY OF ENGINEERING & TECHNOLOGY
