911爆料

Department of 911爆料 and Electronic Engineering

Avatar

Dr. Ashraful Ghani Bhuiyan

Professor
+880-2477733351-70 Ext. 307 (O), 308 (R)
[email protected] , [email protected]
Address:
Research Interest: Advanced functional materials. High-efficiency solar cells. Energy harvesting using nanogenerators. Fabrication of electronic materials. Modeling, simulation and characterization of devices.

Download CV

Bio

Ashraful Ghani BHUIYAN is serving as a Professor in the Department of 911爆料 and Electronic Engineering at Khulna University of Engineering & Technology (KUET), 911爆料 since 2009. He has served as the Dean, Faculty of 911爆料 and Electronic Engineering and as the Head, Dept. of 911爆料 and Electronic Engineering at KUET. In his academic carrier, Professor BHUIYAN has been a Visiting Professor with the University of Fukui, Japan during the years 2018-2019 and 2010-2011. He has also served as the Key EM LEADERS Person of the Erasmus Mundus Leaders projects (http://www.emleaders.eu/) at KUET supported by European Union. Professor BHUIYAN was the organizing chair of the 1st International Conference on 911爆料 Information and Communication Technology (EICT 2013). He also worked as an Invitational Research Fellow and Postdoctoral Research Fellow at the Graduate School of Engineering, University of Fukui, Japan sponsored by the Japan Society for the Promotion of Science (JSPS). He was awarded PhD and MSc from the Department of 911爆料 and Electronics Engineering at University of Fukui, Japan. Professor BHUIYAN started his academic career as a lecturer in 1996 at KUET after passing the BSc with a prestigious Prime Ministers Gold Medal award for his outstanding performance. Professor BHUIYAN has been involving in research for the advancement of III-nitride semiconductors and devices for the last two decades. His primary focus has been on the fabrication and characterization of III-nitride semiconductors and their alloys for future high-efficiency high-performance solar cells, energy-efficient and ultra-high-speed devices. In addition, he has also been engaged in the research of Nano-materials and devices. He has authored and co-authored numerous research articles in high impact journals along with many international prestigious conference proceedings. He also authored a book chapter. Professor BHUIYAN is a Senior Member of Institute of 911爆料 and Electronic Engineers (IEEE), USA and a Life Fellow of Institute of Engineers 911爆料 (IEB).

Publication

Book Chapter
  • 1. Ashraful Ghani Bhuiyan, Akihiro Hashimoto, and Akio Yamamoto, "," Advanced Materials in Electronics , Research Signpost, 2004.
International Journal
  • 44. Daiki Ishimaru, Ashraful G. Bhuiyan, Akihiro Hashimoto, "Fabrication of InN on epitaxial graphene using RF-MBE," Journal of Applied Physics, , 2019.
  • 43. Md. Sherajul Islam, Khalid N. Anindya, A. G. Bhuiyan, and A. Hashimoto, "Deconvolution of Raman spectra of disordered monolayer graphene: an approach to probe the phonon modes," Bulletin of Materials Science, Springer, , 2019.
  • 42. Ashraful G. Bhuiyan, Md. Rafiqul Islam and Akio Yamamoto, "Growth and Characterization of Indium Nitride (InN) Semiconductor for High Efficiency Multijunction Solar Cells," Journal of 911爆料 Engineering, JEE (IEB), , 2006.
  • 41. A. Yamamoto, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Narita, "Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells," Materials for Renewable and Sustainable Energy, , 2013.
  • 40. A. Yamamoto and A. G. Bhuiyan, "Recent Progress and Challenges in InN-based Solar Cells," Journal of the Vacuum Society of Japan, , 2012.
  • 39. Md. Sherajul Islam, Md. Arafat Hossain, Sakib M. Muhtadi, Ashraful G. Bhuiyan, "Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor," Advanced Materials Research, , 2012.
  • 38. Md. Rafiqul Islam, Md. Tanvir Hasan, Ashraful G. Bhuiyan, M. R. Islam, and A. Yamamoto, "Design and performance of In x Ga 1-x N-based MJ solar cells," IETECH Journal of 911爆料 Analysis, , 2008.
  • 37. Ashraful G. Bhuiyan, Md. Sherajul Islam, A. Hashimoto, "Molecular beam epitaxy of InAlN alloys in the whole compositional range," AIP Advances, , 2020.
  • 36. Ashraful G. Bhuiyan, Kenji Kuroda, Md. Sherajul Islam, A. Hashimoto, "Behavior of Raman B1 (High) mode and evaluation of crystalline quality in the In x Ga 1-x N alloys grown by RF-MBE," Bulletin of Materials Science, , 2020.
  • 35. Ashraful G Bhuiyan,A Hashimoto,A Yamamoto,R Ishigami, "," Journal of Crystal Growth, Elsevier BV, 2000, doi: https://doi.org/10.1016/S0022-0248(00)00322-5
  • 34. A.G. Bhuiyan,A. Yamamoto,A. Hashimoto, "A Novel Two-Step Method for Improvement of MOVPE Grown InN Film on GaP(111)B Substrate," physica status solidi (b), Wiley, 2001, doi: https://doi.org/10.1002/1521-3951(200111)228:1%3C27::AID-PSSB27%3E3.0.CO;2-S
  • 33. Ashraful G Bhuiyan,A Yamamoto,A Hashimoto,Y Ito, "," Journal of Crystal Growth, Elsevier BV, 2002, doi: https://doi.org/10.1016/S0022-0248(01)02155-8
  • 32. A.G. Bhuiyan,T. Tanaka,A. Yamamoto,A. Hashimoto, "Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LMOVPE) of Indium Nitride (InN)," physica status solidi (a), Wiley, 2002, doi: https://doi.org/10.1002/1521-396X(200212)194:2%3C502::AID-PSSA502%3E3.0.CO;2-2
  • 31. Ashraful Ghani Bhuiyan,Akihiro Hashimoto,Akio Yamamoto, "," Journal of Applied Physics, AIP Publishing, 2003, doi: https://doi.org/10.1063/1.1595135
  • 30. Ashraful Ghani Bhuiyan,Kenichi Sugita,Ken Kasashima,Akihiro Hashimoto,Akio Yamamoto,Valery Yu. Davydov, "," Applied Physics Letters, AIP Publishing, 2003, doi: https://doi.org/10.1063/1.1632038
  • 29. Ashraful Ghani Bhuiyan,Tatsuya Tanaka,Ken Kasashima,Akihiro Hashimoto,Akio Yamamoto, "," Japanese Journal of Applied Physics, IOP Publishing, 2003, doi: 10.1143/JJAP.42.7284
  • 28. Md. Tanvir Hasan,Ashraful G. Bhuiyan,Akio Yamamoto, "," Solid-State Electronics, Elsevier BV, 2008, doi: https://doi.org/10.1016/j.sse.2007.07.005
  • 27. Md. Tanvir Hasan,Md. Rejvi Kaysir,Md. Sherajul Islam,Ashraful G. Bhuiyan,Md. Rafiqul Islam,A. Hashimoto,A. Yamamoto, "," physica status solidi c, Wiley, 2010, doi: https://doi.org/10.1002/pssc.200983608
  • 26. Md. Tanvir Hasan,Md. Jahirul Islam,Rajib鈥恥l鈥� Hasan,Md. Sherajul Islam,Shahrina Yeasmin,Ashraful G. Bhuiyan,Md Rafiqul Islam,Akio Yamamoto, "," physica status solidi c, Wiley, 2010, doi: https://doi.org/10.1002/pssc.200983593
  • 25. Md. Sherajul Islam, Sakib M. Muhtadi, Md. Tanvir Hasan, Ashraful G. Bhuiyan, Md. Rafiqul Islam, A. Hashimoto, A. Yamamoto, "," Physica Status Solidi c, Wiley, 2010, doi: https://doi.org/10.1002/pssc.200983597
  • 24. K. Sasamoto,T. Hotta,K. Sugita,A.G. Bhuiyan,A. Hashimoto,A. Yamamoto,K. Kinoshita,Y. Kohji, "," Journal of Crystal Growth, Elsevier BV, 2011, doi: https://doi.org/10.1016/j.jcrysgro.2010.10.217
  • 23. K. Sugita,M. Tanaka,K. Sasamoto,A.G. Bhuiyan,A. Hashimoto,A. Yamamoto, "," Journal of Crystal Growth, Elsevier BV, 2011, doi: https://doi.org/10.1016/j.jcrysgro.2010.12.025
  • 22. Kohei Sasamoto,Toru Hotta,Mikiyasu Tanaka,Ken鈥恑chi Sugita,Ashraful Ghani Bhuiyan,Akihiro Hashimoto,Akio Yamamoto, "," physica status solidi c, Wiley, 2011, doi: https://doi.org/10.1002/pssc.201001091
  • 21. Sakib M. Muhtadi,S. M. Sajjad Hossain,Ashraful G. Bhuiyan,K. Sugita,A. Hashimoto,A. Yamamoto,M. Mofazzal Hossain, "," physica status solidi c, Wiley, 2011, doi: https://doi.org/10.1002/pssc.201000979
  • 20. Sakib M. Muhtadi,S. M. Sajjad Hossain,Ashraful G. Bhuiyan,K. Sasamoto,A. Hashimoto,A. Yamamoto, "," physica status solidi c, Wiley, 2011, doi: https://doi.org/10.1002/pssc.201000974
  • 19. Md. Mottaleb HOSSAIN,Md. Abdullah-AL HUMAYUN,Md. Tanvir HASAN,Ashraful Ghani BHUIYAN,Akihiro HASHIMOTO,Akio YAMAMOTO, "," IEICE Transactions on Electronics, Institute of Electronics, Information and Communications Engineers (IEICE), 2012, doi: 10.1587/transele.E95.C.255
  • 18. Ashraful G. Bhuiyan,A. Mihara,T. Esaki,K. Sugita,A. Hashimoto,A. Yamamoto,N. Watanabe,H. Yokoyama,N. Shigekawa, "," physica status solidi c, Wiley, 2011, doi: https://doi.org/10.1002/pssc.201100355
  • 17. K. Sugita,T. Hotta,D. Hironaga,A. Mihara,A. G. Bhuiyan,A. Hashimoto,A. Yamamoto, "," physica status solidi c, Wiley, 2012, doi: https://doi.org/10.1002/pssc.201100441
  • 16. Ashraful Ghani Bhuiyan,Kenichi Sugita,Akihiro Hashimoto,Akio Yamamoto, "," IEEE Journal of Photovoltaics, Institute of 911爆料 and Electronics Engineers (IEEE), 2012, doi: https://doi.org/10.1109/JPHOTOV.2012.2193384
  • 15. A. Yamamoto,A. Mihara,D. Hironaga,K. Sugita,A. G. Bhuiyan,A. Hashimoto,N. Shigekawa,N. Watanabe, "," physica status solidi c, Wiley, 2013, doi: https://doi.org/10.1002/pssc.201200649
  • 14. Md. Sherajul Islam,Md. Tawabur Rahaman,Ashraful Ghani Bhuiyan,Akihiro Hashimoto, "," Journal of Circuits, Systems and Computers, World Scientific Pub Co Pte Lt, 2015, doi: https://doi.org/10.1142/S0218126615400022
  • 13. Md. Fahim-Al-Fattah,Md. Tawabur Rahman,Md. Sherajul Islam,Ashraful G. Bhuiyan, "," International Journal of Nanoscience, World Scientific Pub Co Pte Lt, 2016, doi: https://doi.org/10.1142/S0219581X16400019
  • 12. Md. Sherajul Islam,Khalid N. Anindya,Ashraful G. Bhuiyan,Satoru Tanaka,Takayuki Makino,Akihiro Hashimoto, "," Japanese Journal of Applied Physics, IOP Publishing, 2017, doi: 10.7567/JJAP.57.02CB04
  • 11. A S M Jannatul Islam,Md Sherajul Islam,Naim Ferdous,Jeongwon Park,A G Bhuiyan,Akihiro Hashimoto, "," Nanotechnology, IOP Publishing, 2019, doi: 10.1088/1361-6528/ab3697
  • 10. Joy D. Sarker,Md. Sherajul Islam,Naim Ferdous,Pantha P. Sarker,Ashraful G. Bhuiyan,Takayuki Makino,Akihiro Hashimoto, "," Japanese Journal of Applied Physics, IOP Publishing, 2020, doi: 10.7567/1347-4065/ab48b5
  • 9. A S M Jannatul Islam,Md Sherajul Islam,Naim Ferdous,Jeongwon Park,Ashraful G Bhuiyan,Akihiro Hashimoto, "," Materials Research Express, IOP Publishing, 2019, doi: 10.1088/2053-1591/ab5a96
  • 8. Ashraful G. Bhuiyan,Daiki Ishimaru,Akihiro Hashimoto, "," Crystal Growth & Design, American Chemical Society (ACS), 2020, doi: https://doi.org/10.1021/acs.cgd.9b00699
  • 7. Khalid N. Anindya,Md Sherajul Islam,Jeongwon Park,Ashraful G. Bhuiyan,Akihiro Hashimoto, "," Current Applied Physics, Elsevier BV, 2020, doi: https://doi.org/10.1016/j.cap.2020.02.006
  • 6. Ashraful G. Bhuiyan,Md. Sherajul Islam,Daizo Hironaga,Akihiro Hashimoto, "," Superlattices and Microstructures, Elsevier BV, 2020, doi: https://doi.org/10.1016/j.spmi.2020.106448
  • 5. Ashraful G. Bhuiyan,Yuta Kamada,Md. Sherajul Islam,Riku Syamoto,Daiki Ishimaru,Akihiro Hashimoto, "," Results in Physics, Elsevier BV, 2021, doi: https://doi.org/10.1016/j.rinp.2020.103714
  • 4. Ashraful G. Bhuiyan,Taiji Terai,Tomohiro Katsuzaki,Naoki Takeda,Akihiro Hashimoto, "," Applied Surface Science, Elsevier BV, 2021, doi: https://doi.org/10.1016/j.apsusc.2021.149295
  • 3. A. S. M. Jannatul Islam,Md. Sherajul Islam,Md. Sayed Hasan,Kamal Hosen,Md. Shahadat Akbar,Ashraful G. Bhuiyan,Jeongwon Park, "," RSC Advances, Royal Society of Chemistry (RSC), 2023, doi: https://doi.org/10.1039/D3RA03825D
  • 2. A.S.M. Jannatul Islam,Md. Shahadat Akbar,Md. Sherajul Islam,Catherine Stampfl,Ashraful G. Bhuiyan,Jeongwon Park, "," Materials Chemistry and Physics, Elsevier BV, 2024, doi: https://doi.org/10.1016/j.matchemphys.2024.129068
  • 1. Arefin Ahamed Shuvo,Ashraful Ghani Bhuiyan,Md. Sherajul Islam, "," ACS Applied Electronic Materials, American Chemical Society (ACS), 2024, doi: https://doi.org/10.1021/acsaelm.4c00534
International Conference
  • 79. Md. Shahjahan, A. G. Bhuiyan, B. C. Gosh, "Potentiality of Biogas as a fuel in 911爆料: A Discussion," Proceedings of National seminar on utilization of renewable and alternative energy sources for sustainable development (SURAESD'98), , 1998.
  • 78. Ashraful G. Bhuiyan, M. Adachi, M. Ohkubo, A. Hashimoto, A. Yamamoto, "MOCVD growth of InN on GaP(111)B substrate," 60th Autumn Meeting, The Japan Society of Applied Physics, , 1999.
  • 77. Ashraful G. Bhuiyan, Y. Murakami, A. Hashimoto, A. Yamamoto, "High temperature growth of InN on GaP(111)B substrate," 61st Autumn Meeting, The Japan Society of Applied Physics, , 2000.
  • 76. Ashraful G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Two-step growth of epitaxial InN on GaP(111)B substrate using MOCVD," Proceedings of the Joint conference of Hokuriku Chapters of 911爆料 Societies, , 2000.
  • 75. M. Adachi, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, Y. Ito, "Characterization of heteroepitaxial InN/substrate interface by RBS measurement," Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2000.
  • 74. Ashraful G. Bhuiyan, A. Hashimoto, and A. Yamamoto, "Latest Progress in the MOVPE growth of Indium nitride (InN) film," Proceedings of the Technical Report of the Institute of Electronics Information and Communication Engineers (IEICE), , 2002.
  • 73. T. Tanaka, A. G. Bhuiyan, K. Sugita, A. Hashimoto, A. Yamamoto, "MOVPE growth of InN using a high gas-flow speed reactor," 49th Spring Meeting, The Japan Society of Applied Physics, , 2002.
  • 72. T. Tanaka, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Growth of InN films using ArF excimer laser assisted MOVPE," 63 rd Autumn Meeting, The Japan Society of Applied Physics, , 2002.
  • 71. K. Sugita, T. Tanaka, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Effect of NH 3 flow rate on electrical properties of atmospheric pressure MOVPE growth of InN films," Extended Abstracts, 63rd Autumn Meeting, The Japan Society of Applied Physics, , 2002.
  • 70. T. Yamauchi, T. Tanaka, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "ArF excimer laser assisted MOVPE GaN," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2002.
  • 69. K. Kasashima, T. Tanaka, A. G. Bhuiyan, T. Yamauchi, A. Hashimoto, A. Yamamoto, "Ar Fexcimer laser assisted MOVPE of InN -Effects of laser beam incident direction," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2002.
  • 68. K. Kasashima, T. Tanaka, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Growth of InN films by ArFexcimer laser-assisted MOVPE with the horizontal laser irradiation," Extended Abstracts, 50th Spring Meeting, The Japan Society of Applied Physics, , 2003.
  • 67. K. Sugita, H. Takatuka, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Temperature dependence of PL spectra for atmospheric-pressure MOVPE InN films," Extended Abstracts, 64th Autumn Meeting, The Japan Society of Applied Physics, , 2003.
  • 66. K. Sugita, M. Yasuda, T. Kuroda, K. Kasashima, A. G. Bhuiyan, A. Hashimoto, A.Yamamoto, "Effects of substrate nitridation condition on the polarity of LA-MOVPE grown InN film on sapphire," Proceedings of the Joint conference of Hokuriku Chapters of Institute of 911爆料 Engineers, Japan, , 2003.
  • 65. K. Kasashima, K. Sugita, A. G. Bhuiyan, A. Hashimoto, A.Yamamoto, Y. Nambo, "Low temperature growth of InN films by ArF excimer Laser-assisted MOVPE," Proceedings of the Technical Report of the Institute of Electronics Information and Communication Engineers (IEICE), , 2003.
  • 64. Ashraful G. Bhuiyan, A. Hashimoto, A. Yamamoto, Valery Yu. Davydov, "Optical properties of InN grown on GaP(111)B," Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2003.
  • 63. Ashraful G. Bhuiyan, K. Sugita, K. Kasashima, A. Hashimoto, A. Yamamoto, Valery Yu. Davydov, "Actual band gap energy of Indium nitride (InN)," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2003.
  • 62. T. Mikami, Ashraful G. Bhuiyan, K. Sugita, A. Hashimoto and A. Yamamoto, "Simulation of output performance for InGaN/Si tandem solar cell," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies, , 2010.
  • 61. K. Sasamoto, D. Hironaga, T. Hotta, K. Sugita, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto and K. Kinoshita, "Growth behavior of highly Mg-doped MOVPE-InGaN," 58th Spring Meeting, The Japan Society of Applied Physics, , 2011.
  • 60. K. Sugita, T. Esaki, A. Mihara, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama and N. Shigekawa, "MOVPE growth of InGaN on Si (111) substrates," 58th Spring Meeting, The Japan Society of Applied Physics, , 2011.
  • 59. A. G. Bhuiyan, K. Sugita, T. Mikami, A. Hashimoto, A. Yamamoto and N. Shigekawa, "Simulation of two-junction InGaN/Si tandem solar cell," Extended Abstracts, 58th Spring Meeting, The Japan Society of Applied Physics, , 2011.
  • 58. T. Hotta, D. Hironaga, A. Mihara, K. Sugita, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range," Extended Abstracts, 72nd Autumn Meeting, The Japan Society of Applied Physics, , 2011.
  • 57. D. Hironaga, T. Hotta, A. Mihara, K. Sugita, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "Catalyst temperature (RT锝�1000鈩�) effects in Pt-catalyst-assisted MOVPE growth of InN," Extended Abstracts, 72nd Autumn Meeting, The Japan Society of Applied Physics, , 2011.
  • 56. Ashraful G. Bhuiyan, A. Yamamoto, A. Hashimoto and R. Ishigami, "Significance of the suppression of substrate surface nitridation for epitaxial growth of wurtzite InN on GaP(111) and InP(111) substrates," Proc. International Workshop on Nitride Semiconductors (IWN 2000), , 2000.
  • 55. A. Yamamoto, A. G. Bhuiyan, A. Hashimoto, "MOVPE Growth of High Quality InN," Proceedings of the Fifth Russia-Japan Seminar on Semiconductor Surfaces (RJSSS-5), , 2002.
  • 54. A. G. Bhuiyan, T. Tanaka, K. Kasashima, A. Hashimoto, A. Yamamoto, "Laser-assisted MOVPE: A highly potential technique for the epitaxial growth of InN," Conference Digest 5th International Conference on Nitride Semiconductors (ICNS-5), , 2003.
  • 53. Akio Yamamoto, Kenichi Sugita, Ashraful G. Bhuiyan, and A. Hashimoto, "Epitaxial Growth of InN by the Conventional and ArF Excimer Laser-Assisted MOVPE," First International Indium Nitride Workshop, , 2003.
  • 52. M. R. Islam, R. Ahshan, M. S. Rahman, A. G. Bhuiyan, P. Verma, M. Yamada, and M. Tatsumi, "Preliminary results on crystal growth of bulk In x Ga 1-x As using TLZ method," Proc. 3rd International Conference on 911爆料 & Computer Engineering (ICECE 2004), , 2004.
  • 51. Ashraful G. Bhuiyan, Md. Rafiqul Islam, M. R. Islam, A. Hashimoto, and A. Yamamoto, "Growth and properties of InN layers on sapphire substrate using LA-MOVPE," Proc. 3rd International 15 Conference on 911爆料 & Computer Engineering (ICECE 2004), IEEE, 2004.
  • 50. M. S. Rahman, M. R. Islam, M. S. Alam, A. G. Bhuiyan, and M. Yamada, "Study on Crystal Breakage Mechanism in Bulk In x Ga 1-x As Grown by Two-Step MCZM Method," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006), IEEE, 2006.
  • 49. Md. Rafiqul Islam, M. A. Rayhan, M. E. Hossain, Ashraful G. Bhuiyan, M. R. Islam and A. Yamamoto, "Projected Performance of In x Ga 1-x N-based Multi-junction solar cells," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006), IEEE, 2006.
  • 48. Md. Tanvir Hasan, Md. Fahimul Islam, Ashraful G. Bhuiyan, M. R. Islam, and A. Yamamoto, "Piezoelectrically Induced Polarization and Charge in InN-based Heterostructures," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006), IEEE, 2006.
  • 47. Md. Rafiqul Islam, Md. Tanvir Hasan, M. A. Rayhan, and Ashraful G. Bhuiyan, "High Efficiency In x Ga 1-x N-based Multi-junction Photovoltaic cells with concentrator," Proc. International Conference on Information and Communication Technology (ICICT 2007), , 2007.
  • 46. M. S. Alam, M. S. Rahman, M. R. Islam, A. G. Bhuiyan, and M. Yamada, "Refractive Index, Absorption Coefficient, and Photoelastic Constant: Key Parameters of InGaAs Materials Relevant to InGaAs-based Device Performance," 19th International Conference on Indium Phosphide and Related Materials (IPRM鈥�07), IEEE, 2007.
  • 45. Md. Tanvir Hasan, Md. Azim Ullah, Md. Asaduzzaman and Ashraful G. Bhuiyan, "1.55 渭m Laser Using InN-Based Quantum Well Heterostructure," 5th Int. Conf. on 911爆料 & Computer Engineering (ICECE 2008), IEEE, 2008.
  • 44. Md. T. Hasan, Md. M. Rahman, A. N. M. Shamsuzzaman, Md. S. Islam and Ashraful G. Bhuiyan, "InN-based Dual Channel High Electron Mobility Transistor," 5th Int. Conf. 911爆料 & Computer Engineering (ICECE 2008), IEEE, 2008.
  • 43. Md. Sherajul Islam, A. K. M. Z. Rahman, Md. A. R. Chowdhury, Md. R. Islam and Ashraful G. Bhuiyan, "In x Ga 1-x N Based Multi Junction Concentrator Solar Cell," 5th Int. Conf. 911爆料 & Computer Engineering (ICECE 2008), IEEE, 2008.
  • 42. Sakib M. Muhtadi, S. M. Sajjad Hossain, Zahid H. Mahmud, and Ashraful G. Bhuiyan, "A Novel In 0.1 Ga 0.9 N/InN High Electron Mobility Transistor for High Frequency Applications," XVth International Workshop on the Physics of Semiconductor Devices (IWPSD 2009), , 2009.
  • 41. Sakib M. Muhtadi, S. M. Sajjad Hossain, Raisul Islam, Zahid H. Mahmud and Ashraful G. Bhuiyan, "Charge Control Characteristic of a Novel In m Ga 1-m N/InN High Electron Mobility Transistor Incorporating Quantum Mechanical Effects鈥�," Proc. Communication Technologies and VLSI Design (CommV鈥�09), , 2009.
  • 40. K. Sasamoto, T. Hotta, K. Sugita, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Kohji, "MOVPE growth of high quality p-type InGaN with intermediate In compositions," The Sixteenth International Conference on Crystal Growth (ICCG-16), , 2010.
  • 39. K. Sugita, M. Tanaka, K. Sasamoto, A. G. Bhuiyan, A. Hashimoto, A. Yamamoto, "MOVPE growth of InAlN/InGaN heterostructures with an intermediate In composition range," The Sixteenth International Conference on Crystal Growth (ICCG-16), , 2010.
  • 38. K. Sasamoto, T. Hotta, M. Tanaka, K. Sugita, A. G. Bhuiyan, A. Hashimoto and A. Yamamoto, "Low Temperature Growth of GaN by using Catalyst-Assisted MOVPE," International Workshop on Nitride Semiconductors (IWN 2010), , 2010.
  • 37. Sakib M. Muhtadi, S. M. Sajjad Hossain, M. Mofazzal Hossain, Ashraful G. Bhuiyan, K. Sugita, A. Yamamoto, "DC and RF Performance of In 0.1 Ga 0.9 N/InN High Electron Mobility Transistor," International Workshop on Nitride Semiconductors (IWN 2010), , 2010.
  • 36. Md. Sherajul Islam, Ashraful G. Bhuiyan, Kenichi聽Sugita, A. Hashimoto and A. Yamamoto, "AlInN/InN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) with Extremely High 2DEG," International Workshop on Nitride Semiconductors (IWN 2010), , 2010.
  • 35. Sakib M. Muhtadi, S. M. Sajjad Hossain, Ashraful G. Bhuiyan, K. Sasamoto, A. Hashimoto, A. Yamamoto, "Effect of spacer layer on carrier accumulation in n-In 0.05 Ga 0.95 N/InN HEMT incorporating quantum mechanical effect," International Workshop on Nitride Semiconductors (IWN 2010), , 2010.
  • 34. Sakib M. Muhtadi, S. M. Sajjad Hossain, Md. Sherajul Islam, Ashraful G. Bhuiyan, and M. M. Hossain, "Effect of Gate Voltage on the Performance of a Novel In m Ga 1-m N/InN HEMT: A Quantum Mechanical Self Consistent Study," IEEE TENCON 2010, , 2010.
  • 33. Md. Sherajul Islam, Md. Shahid Iqbal, Md. Rejvi Kaysir, S. M. Hassan Mahmud, A. N. M Enamul Kabir, Ashraful G. Bhuiyan, and A. Yamamoto, "High Efficiency In x Ga 1-x N-Based Quantum Well Solar Cell," 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010), , 2010.
  • 32. Md. Sherajul Islam, S. M. Muhtadi, Ashraful G. Bhuiyan, A. Hashimoto and A. Yamamoto, "Charge Control Studies for an AlInN/InN Heterojunction Field Effect Transistor without and with oxide layer," 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010), , 2010.
  • 31. M. Tanvir Hasan, M. Arafat Hossain, M. Majharul Haque, Ashraful G. Bhuiyan and A. Yamamoto, "Effects of cap layer on 2DEGs in InN-based heterostructures," Proc. 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010), , 2010.
  • 30. K. Sugita, T. Hotta, T. Hironaga, A. Mihara, A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, "Highly enhanced migration in Pt-catalyst-assisted MOVPE InN by controlling the catalyst temperature," Presented at ICNS-9, , 2011.
  • 29. K. Sugita, M. Tanaka, K. Sasamoto, A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, "MOVPE growth of InAlN/InGaN hetero-junction," Presented at ICNS-9, , 2011.
  • 28. Ashraful G. Bhuiyan, T. Esaki, A. Mihara, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, "MOVPE growth of InGaN with an intermediate range of In content on Si (111) substrates," Presented at ICNS-9, , 2011.
  • 27. Ashraful G. Bhuiyan, A. Mihara, K. Sugita, A. Hashimoto, A. Yamamoto, N. Watanabe, H. Yokoyama, and N. Shigekawa, "Fabrication of InGaN/Si (111) hetero-structure with intermediate In contents for 2-junction tandem solar cells," Presented at PVSEC 2011, , 2011.
  • 26. 31. A. Yamamoto, D. Hironaga, A. Mihara, Y. Muramatsu, K. Sugita, A. G. Bhuiyan, A. Hashimoto, N. Shigekawa, and N. Watanabe, "MOVPE growth of In x Ga 1-x N (x~0.5) on Si(111) substrates with a pn junction on the surface," 4th International Symposium on Growth of III-Nitrides, , 2012.
  • 25. M. S. Islam, M. T. Rahman, A. G. Bhuiyan, A. Hashimoto, "Vacancy induced phonon properties of hydrogen passivated graphene," 2013 International Conference on 911爆料 Information and Communication Technology (EICT), , 2014, doi: 10.1109/EICT.2014.6777848
  • 24. M. M. Islam, M. T. I. Bhuiyan, M. T. Rahman, A. G. Bhuiyan, "The effect of quantum dot size, interdot distance and indium content on InxGa1鈭抶N/GaN QD-IBSC," 2013 International Conference on 911爆料 Information and Communication Technology (EICT), , 2014, doi: 10.1109/EICT.2014.6777904
  • 23. U. Paul, M. Hasan, M. T. Rahman, A. G. Bhuiyan, "Effect of QD size and band-offsets on confinement energy in InN QD heterostructure," 2013 International Conference on 911爆料 Information and Communication Technology (EICT 2013), , 2014, doi: 10.1109/EICT.2014.6777897
  • 22. Md. Sherajul Islam, Ashraful G. Bhuiyan, Md. Fahim-Al-Fattah, "Numerical Analysis on Vibrational Properties of Vacancy-type Disordered Graphene," 2015 International Conference on 911爆料 Engineering and Information Communication Technology (ICEEICT), , 2015.
  • 21. Md. Fahim-Al-Fattah, Md. Tawabur Rahman, Md. Sherajul Islam, A. G. Bhuiyan, Asif Abdullah Khan, "DC and RF Characteristics of Graphene FET Using Analytical Approach," 2015 International Conference on 911爆料 Engineering and Information Communication Technology (ICEEICT), , 2015.
  • 20. Sadi Mohammad, Injamamul Islam Chowdhury, Md. Sherajul Islam, Ashraful G. Bhuiyan, "Effects of photon recycling on the properties of p+ n GaAs solar cell," International Conference on 911爆料 Information and Communication Technology (EICT 2015), , 2015, doi: 10.1109/EICT.2015.7391987
  • 19. Md. Sherajul Islam, Ashraful G. Bhuiyan, Akihiro Hashimoto, "Realistic edge shape effects on the vibrational properties of graphene nanoribbons," International Conference on 911爆料 Information and Communication Technology (EICT 2015), , 2015, doi: 10.1109/EICT.2015.7391987
  • 18. Abu Syed, Md Jannatul Islam, SM Hasanuzzaman, Amit Kumer Podder, Md Sherajul Islam, Ashraful G. Bhuiyan, "Theoretical analysis of substrate effects on the DC performance of AlGaN/GaN high electron mobility transistor," 5th International Conference on Informatics, Electronics and Vision (ICIEV), , 2016.
  • 17. Sayeda Ashrafun Nesa, Md Osman Ali, Ashraful Ghani Bhuiyan, Md Rafiqul Islam, Md Sherajul Islam, "Effect of phosphor distribution on junction temperature reduction in white LEDs," 5th International Conference on Informatics, Electronics and Vision (ICIEV), , 2016.
  • 16. Md Norozzaman Jiko, Mahmudul Hasan Shayket, Ashraful Ghani Bhuiyan, and Golam Rabby, "Design and Implementation of Amphibious Smart Rescue Robot," 2nd International Conference on 911爆料, Computer & Telecommunication Engineering (ICECTE), , 2016.
  • 15. Muhaiminul Islam, Imam-Ul-Ferdous, Ashraful G. Bhuiyan, Md. Sherajul Islam, "Thermal Conductivity in Suspended h-BN Flake of Variable Shapes," 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM- NANO 2017), , 2017.
  • 14. Md. Sherajul Islam, Ashraful G. Bhuiyan, Akihiro Hashimoto, "Effect of 10B isotope doping on the phonon modes of two dimensional h-BN," 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), , 2017.
  • 13. A. S. M. Jannatul Islam, Md. Rasidul Islam, Md. Sherajul Islam, A. G. Bhuiyan, "Numerical Simulation of Vibrational Properties of AGNR with Vacancy and Stone Wales Defects," 3rd International Conference on 911爆料 Information and Communication Technology (EICT), , 2017.
  • 12. Amit Kumer Podder, A. S. M. Jannatul Islam, SM Hasanuzzaman, Md. Sherajul Islam and Ashraful G. Bhuiyan, "Substrate Effects on Channel Temperature Distribution of AlGaN/GaN HEMT," 3rd International Conference on 911爆料 Information and Communication Technology (EICT) 2017, , 2017.
  • 11. H. M. R. Faruque, A. Mukherjee, M. S. Islam, A. G. Bhuiyan, A. Hashimoto, "Effects of Edge Termination on the Electronic Properties of Zigzag Boron Nitride Nanoribbons," 10th International Conference on 911爆料 and Computer Engineering (ICECE) 2018, , 2018.
  • 10. A. Mukherjee, H. M. R. Faruqu, M. S. Islam, A. G. Bhuiyan, A. Hashimoto, "Permeability Analysis of Pure Water across Nano Porous Graphene," International Conference on 911爆料, Computer and Communication Engineering (ECCE) 2019, , 2019.
  • 9. M. S. Islam, J. D. Sarker, ASM Jannatul Islam, A. G. Bhuiyan, T. Makino, A. Hashimoto, "Tunable electronic properties in bismuthene and two dimensional SiC van der Waals heterobilayer," 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), , 2019.
  • 8. A.S.M. Jannatul Islam, Md. Sherajul Islam and A. G. Bhuiyan, "Phonon Properties of Armchair and Zigzag Edged GaN Nanoribbon," 4th International Conference on 911爆料 Information and Communication Technology (EICT), IEEE, 2019.
  • 7. Maruf Ahsan Rifat, MD. Sharifuzzman Shakil, Ashraful G. Bhuiyan, A. Hashimoto, "Theoretical Investigation for Growth of High Quality GaN on Epitaxial Graphene," 5th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT), IEEE, 2021.
  • 6. Shahriar Sheikh, Arefin Ahamed Shuvo, Ashraful G. Bhuiyan, "Effects of Structural Variation for Improved Performance of a Vertical AlGaN/GaN Superjunction HEMT," 5th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT), IEEE, 2021.
  • 5. Md. Sharifuzzman Shakil, Maruf Ahsan Rifat, Ashraful Ghani Bhuiyan, Atonu Mukherjee, Md. Sherajul Islam and Akihiro Hashimoto, "Water Permeability Analysis by Controlling the Porosity of Nanomesh Graphene," 5th International Conference on 911爆料 Information and Communication Technology (EICT) 2021, IEEE, 2021.
  • 4. Sagor Hazra, Arefin Ahamed Shuvo, Ashraful G. Bhuiyan, "911爆料 Characteristics of Dual Gate AlGaN/GaN High-Electron Mobility Transistors," 5th International Conference on 911爆料 Information and Communication Technology (EICT) 2021, IEEE, 2021.
  • 3. Priyotous Banik Tirtha, Md Mutassim Fuad, Arefin Ahamed Shuvo, Maisha Farzana Mitu, Ashraful G. Bhuiyan, "," 6th International Conference on 911爆料 Information and Communication Technology (EICT) 2023, IEEE, 2023.
  • 2. Md Farhan Tanvir, ASM Jannatul Islam, Ashraful G. Bhuiyan, "鈥淭heoretical Performance Analysis of High-Efficiency In x Ga 1-x N/Si Tandem Solar Cells鈥�," 3rd International Conference on Advancement in 911爆料 and Electronic Engineering (ICAEEE), IEEE, 2024.
  • 1. Mohammed Farhan Gony, Maruf Ahsan Rifat, Ashraful G. Bhuiyan, Md Sherajul Islam, "Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene," 6th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT), IEEE, 2024.

Education

  • Invitational Fellow
    University of Fukui, Japan
    Remarks: Awarded by Japan Society for the Promotion of Science (JSPS)

  • Postdoctoral Fellow
    University of Fukui, Japan
    Remarks: Awarded by Japan Society for the Promotion of Science (JSPS)

  • PhD in Electronics (03 Years)
    University of Fukui, Japan
    Thesis: ArF Excimer Laser Assisted Metalorganic Vapor Phase Epitaxy: A New approach for Indium nitride (InN) Semiconductor growth


    Remarks:

  • Master of Science in Engineering (M.Sc. Eng.) (02 Years)
    University of Fukui, Japan
    Thesis: Gallium Phosphide: A highly promising substrate material for improved quality epitaxial film of InN


    Remarks:

  • Bachelor of Science in Engineering (B.Sc. Eng.) (04 Years)
    Khulna University of Engineering & Technology (KUET), 911爆料
    Group: 911爆料 and Electronic Engineeri(1996)
    Remarks: First Class First
    Prime Minister Gold Medal

Scholarship and Award

  • Invitational Fellowship Award
    Japan Society for the Promotion of Science (JSPS), 2018
  • Best Paper Award
    2nd International Conference on 911爆料 Information and Communication Technology (EICT) 2015
  • Certificate of Appreciation
    Japan Society for the Promotion of Science (JSPS), 2010
  • Postdoctoral Fellowship Award
    Japan Society for the Promotion of Science (JSPS), 2009
  • Best Paper Award
    KUET Excellence Foundation paper competition, 2008
  • IEEE Student Paper Award (Honorable Mention)
    IEEE Electron Device Society 911爆料 Chapter Student Paper Contest 2007
  • Awarded by the American Institute of Physics (AIP)
    For writing a review paper on Indium Nitride (InN) Semiconductor in the Journal of Applied Physics (JAP), 2003
  • Japanese Government Scholarship (MONBUSHO)
    To study M.Sc. Eng. and PhD, 1998-2004
  • Prime Ministers Gold Medal
    For outstanding performance in Bachelor of Science in Engineering, Khulna University of Engineering & Technology, 2003
  • Yearly Award and Scholarship
    During the 4 years Bachelor of Science in Engineering, Khulna University of Engineering & Technology, 1992-1995

Research

  • Advanced functional materials
    Fabrication and characterization of electronic materials and their devices
    High-efficiency solar cells and their materials
    Energy harvesting using nanogenerators


Academic Experience

  • Professor
    911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET), Khulna Jul 12, 2009 to Jan 01, 1970
  • Associate Professor
    911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET), Khulna Oct 23, 2007 to Jul 11, 2009
  • Assistant Professor
    911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET), Khulna Apr 15, 2004 to Oct 22, 2007
  • Lecturer
    911爆料 and Electronic Engineering
    911爆料 Institute of Technology, Khulna, Khulna Jun 23, 1997 to Apr 14, 2004
  • Lecturer
    Telecommunication Engineering
    911爆料 Institute of Technology, Khulna Oct 01, 1996 to Jun 22, 1997
  • Visiting Professor
    911爆料 and Electronics Engineering
    University of Fukui, Japan, Fukui, Japan Sep 01, 2018 to Jun 30, 2019
  • Visiting Professor
    911爆料 and Electronics Engineering
    University of Fukui, Japan, Fukui, Japan Jan 08, 2010 to Sep 23, 2011

Administrative Experience

  • Deputy Director,
    Students' Welfare, KUET
    Students' Welfare, KUET, Khulna May 28, 2008 to Sep 17, 2009
  • Dean,
    Faculty of 911爆料 and Electronic Engineering, KUET, Khulna Nov 28, 2011 to Nov 27, 2013
  • Head,
    Dept of 911爆料 and Electronic Engineering, KUET, Khulna Sep 01, 2014 to Aug 31, 2016
  • Chairman,
    Central Library, KUET, Khulna Jul 15, 2021 to Dec 18, 2022
  • Director,
    Institute of Information and Communication Technology (IICT), KUET, Khulna

Professional Membership

  • Life Fellow (F/09781)
    The Institute of Engineers 911爆料 (IEB)
  • Senior Member (80366548)
    The Institute of 911爆料 and Electronics Engineers (IEEE)

Course Conduct


Supervision

Postgraduate Course:
(1) EE-6905 Advanced Solid State Electronics
(2) EE 6803 MOS Devices

Undergraduate Course:
(1) EE-4209 Semiconductor Device Theory
(2) EE-4219 Semiconductor Fabrication Technology
(3) EE-4204 Sessional on Switchgear and Protection
(4) EE-4121 VLSI Design and Technology
(5) EE-4122 Sessional on VLSI Design and Technology
(6) EE-3219 911爆料 Engineering Materials
(7) EE-2109 Electronics-I
(8) EE-2110 Sessional on Electronics-I
(9) EE-1104 Sessional on Basic 911爆料 Engineering

Last Update: August 20, 2025 22:22