911爆料

Department of 911爆料 and Electronic Engineering

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Dr. Ashraful Ghani Bhuiyan

Professor
+880-2477733351-70 Ext. 307 (O), 308 (R)
[email protected] , [email protected]
Research Interest: Advanced functional materials. High-efficiency solar cells. Energy harvesting using nanogenerators. Fabrication of electronic materials. Modeling, simulation and characterization of devices.

Print Profile

Bio

Ashraful Ghani BHUIYAN is serving as a Professor in the Department of 911爆料 and Electronic Engineering at Khulna University of Engineering & Technology (KUET), 911爆料 since 2009. He has served as the Dean, Faculty of 911爆料 and Electronic Engineering and as the Head, Dept. of 911爆料 and Electronic Engineering at KUET. In his academic carrier, Professor BHUIYAN has been a Visiting Professor with the University of Fukui, Japan during the years 2018-2019 and 2010-2011. He has also served as the Key EM LEADERS Person of the Erasmus Mundus Leaders projects (http://www.emleaders.eu/) at KUET supported by European Union. Professor BHUIYAN was the organizing chair of the 1st International Conference on 911爆料 Information and Communication Technology (EICT 2013). He also worked as an Invitational Research Fellow and Postdoctoral Research Fellow at the Graduate School of Engineering, University of Fukui, Japan sponsored by the Japan Society for the Promotion of Science (JSPS). He was awarded PhD and MSc from the Department of 911爆料 and Electronics Engineering at University of Fukui, Japan. Professor BHUIYAN started his academic career as a lecturer in 1996 at KUET after passing the BSc with a prestigious Prime Ministers Gold Medal award for his outstanding performance. Professor BHUIYAN has been involving in research for the advancement of III-nitride semiconductors and devices for the last two decades. His primary focus has been on the fabrication and characterization of III-nitride semiconductors and their alloys for future high-efficiency high-performance solar cells, energy-efficient and ultra-high-speed devices. In addition, he has also been engaged in the research of Nano-materials and devices. He has authored and co-authored numerous research articles in high impact journals along with many international prestigious conference proceedings. He also authored a book chapter. Professor BHUIYAN is a Senior Member of Institute of 911爆料 and Electronic Engineers (IEEE), USA and a Life Fellow of Institute of Engineers 911爆料 (IEB).

Publication

Books

Bhuiyan,A. G. ,Hashimoto,A. and Yamamoto,a. A. (2004) , Advanced Materials in Electronics ,Research Signpost
Growth and properties of LA-MOVPE InN
Journal
47. Ishimaru,D. ,Bhuiyan,A. G. and Hashimoto,A. (2019) , " Fabrication of InN on epitaxial graphene using RF-MBE," Journal of Applied Physics
46. Islam,M. S. , Anindya,K. N. , Bhuiyan,A. G. and Hashimoto,a. A. (2019) , " Deconvolution of Raman spectra of disordered monolayer graphene: an approach to probe the phonon modes," Bulletin of Materials Science, Springer
45. Bhuiyan,A. G. and Yamamoto,M. R. I. a. A. (2006) , " Growth and Characterization of Indium Nitride (InN) Semiconductor for High Efficiency Multijunction Solar Cells," Journal of 911爆料 Engineering, JEE (IEB)
44. Yamamoto,A. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. and Narita,N. (2013) , " Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells," Materials for Renewable and Sustainable Energy
43. (2012) , " Recent Progress and Challenges in InN-based Solar Cells," Journal of the Vacuum Society of Japan
42. Islam,M. S. , Hossain,M. A. , Muhtadi,S. M. and Bhuiyan,A. G. (2012) , " Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor," Advanced Materials Research
41. Islam,M. R. , Hasan,M. T. , Bhuiyan,A. G. , Islam,M. R. and Yamamoto,a. A. (2008) , " Design and performance of In x Ga 1-x N-based MJ solar cells," IETECH Journal of 911爆料 Analysis
40. Bhuiyan,A. G. ,Islam,M. S. and Hashimoto,A. (2020) , " Molecular beam epitaxy of InAlN alloys in the whole compositional range," AIP Advances
39. Bhuiyan,A. G. , Kuroda,K. , Islam,M. S. and Hashimoto,A. (2020) , " Behavior of Raman B1 (High) mode and evaluation of crystalline quality in the In x Ga 1-x N alloys grown by RF-MBE," Bulletin of Materials Science
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Conference
79. Shahjahan,M. ,Bhuiyan,A. G. and Gosh,B. C. (1998) , "Potentiality of Biogas as a fuel in 911爆料: A Discussion," Proceedings of National seminar on utilization of renewable and alternative energy sources for sustainable development (SURAESD'98)
78. Bhuiyan,A. G. , Adachi,M. , Ohkubo,M. , Hashimoto,A. and Yamamoto,A. (1999) , "MOCVD growth of InN on GaP(111)B substrate," 60th Autumn Meeting, The Japan Society of Applied Physics , Japan
77. Bhuiyan,A. G. , Murakami,Y. , Hashimoto,A. and Yamamoto,A. (2000) , "High temperature growth of InN on GaP(111)B substrate," 61st Autumn Meeting, The Japan Society of Applied Physics , Japan
76. Bhuiyan,A. G. ,Hashimoto,A. and Yamamoto,A. (2000) , "Two-step growth of epitaxial InN on GaP(111)B substrate using MOCVD," Proceedings of the Joint conference of Hokuriku Chapters of 911爆料 Societies , Japan
75. Adachi,M. , Bhuiyan,A. G. , Hashimoto,A. , Yamamoto,A. and Ito,Y. (2000) , "Characterization of heteroepitaxial InN/substrate interface by RBS measurement," Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
74. Bhuiyan,A. G. ,Hashimoto,A. and Yamamoto,a. A. (2002) , "Latest Progress in the MOVPE growth of Indium nitride (InN) film," Proceedings of the Technical Report of the Institute of Electronics Information and Communication Engineers (IEICE) , Japan
73. Tanaka,T. , Bhuiyan,A. G. , Sugita,K. , Hashimoto,A. and Yamamoto,A. (2002) , "MOVPE growth of InN using a high gas-flow speed reactor," 49th Spring Meeting, The Japan Society of Applied Physics , Japan
72. Tanaka,T. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2002) , "Growth of InN films using ArF excimer laser assisted MOVPE," 63 rd Autumn Meeting, The Japan Society of Applied Physics , Japan
71. Sugita,K. , Tanaka,T. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2002) , "Effect of NH 3 flow rate on electrical properties of atmospheric pressure MOVPE growth of InN films," Extended Abstracts, 63rd Autumn Meeting, The Japan Society of Applied Physics , Japan
70. Yamauchi,T. , Tanaka,T. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2002) , "ArF excimer laser assisted MOVPE GaN," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
69. Kasashima,K. , Tanaka,T. , Bhuiyan,A. G. , Yamauchi,T. , Hashimoto,A. and Yamamoto,A. (2002) , "Ar Fexcimer laser assisted MOVPE of InN -Effects of laser beam incident direction," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
68. Kasashima,K. , Tanaka,T. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2003) , "Growth of InN films by ArFexcimer laser-assisted MOVPE with the horizontal laser irradiation," Extended Abstracts, 50th Spring Meeting, The Japan Society of Applied Physics , Japan
67. Sugita,K. , Takatuka,H. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2003) , "Temperature dependence of PL spectra for atmospheric-pressure MOVPE InN films," Extended Abstracts, 64th Autumn Meeting, The Japan Society of Applied Physics
66. Sugita,K. , Yasuda,M. , Kuroda,T. , Kasashima,K. , Bhuiyan,A. G. , Hashimoto,A. and A.Yamamoto,A. (2003) , "Effects of substrate nitridation condition on the polarity of LA-MOVPE grown InN film on sapphire," Proceedings of the Joint conference of Hokuriku Chapters of Institute of 911爆料 Engineers, Japan , Japan
65. Kasashima,K. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. , A.Yamamoto,A. and Nambo,Y. (2003) , "Low temperature growth of InN films by ArF excimer Laser-assisted MOVPE," Proceedings of the Technical Report of the Institute of Electronics Information and Communication Engineers (IEICE) , Japan
64. Bhuiyan,A. G. , Hashimoto,A. , Yamamoto,A. and Davydov,V. Y. (2003) , "Optical properties of InN grown on GaP(111)B," Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
63. Bhuiyan,A. G. , Sugita,K. , Kasashima,K. , Hashimoto,A. , Yamamoto,A. and Davydov,V. Y. (2003) , "Actual band gap energy of Indium nitride (InN)," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
62. Mikami,T. , Bhuiyan,A. G. , Sugita,K. and Yamamoto,A. H. a. A. (2010) , "Simulation of output performance for InGaN/Si tandem solar cell," Extended Abstracts, Annual Meeting of the Hokuriku Chapters of Applied Physics Societies , Japan
61. Sasamoto,K. , Hironaga,D. , Hotta,T. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. and Kinoshita,A. Y. a. K. (2011) , "Growth behavior of highly Mg-doped MOVPE-InGaN," 58th Spring Meeting, The Japan Society of Applied Physics , Japan
60. Sugita,K. , Esaki,T. , Mihara,A. , Bhuiyan,A. G. , Hashimoto,A. , Yamamoto,A. , Watanabe,N. and Watanabe,N. (2011) , "MOVPE growth of InGaN on Si (111) substrates," 58th Spring Meeting, The Japan Society of Applied Physics , Japan
59. Bhuiyan,A. G. , Sugita,K. , Mikami,T. , Hashimoto,A. and Shigekawa,A. Y. a. N. (2011) , "Simulation of two-junction InGaN/Si tandem solar cell," Extended Abstracts, 58th Spring Meeting, The Japan Society of Applied Physics , Japan
58. Hotta,T. , Hironaga,D. , Mihara,A. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2011) , "MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range," Extended Abstracts, 72nd Autumn Meeting, The Japan Society of Applied Physics , Japan
57. Hironaga,D. , Hotta,T. , Mihara,A. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2011) , "Catalyst temperature (RT锝�1000鈩�) effects in Pt-catalyst-assisted MOVPE growth of InN," Extended Abstracts, 72nd Autumn Meeting, The Japan Society of Applied Physics
56. Bhuiyan,A. G. ,Yamamoto,A. and Ishigami,A. H. a. R. (2000) , "Significance of the suppression of substrate surface nitridation for epitaxial growth of wurtzite InN on GaP(111) and InP(111) substrates," Proc. International Workshop on Nitride Semiconductors (IWN 2000) , Nagoya, Japan
55. Yamamoto,A. ,Bhuiyan,A. G. and Hashimoto,A. (2002) , "MOVPE Growth of High Quality InN," Proceedings of the Fifth Russia-Japan Seminar on Semiconductor Surfaces (RJSSS-5) , Vladivostok, Russia
54. Bhuiyan,A. G. , Tanaka,T. , Kasashima,K. , Hashimoto,A. and Yamamoto,A. (2003) , "Laser-assisted MOVPE: A highly potential technique for the epitaxial growth of InN," Conference Digest 5th International Conference on Nitride Semiconductors (ICNS-5) , Nara, Japan
53. Yamamoto,A. , Sugita,K. , Bhuiyan,A. G. and Hashimoto,a. A. (2003) , "Epitaxial Growth of InN by the Conventional and ArF Excimer Laser-Assisted MOVPE," First International Indium Nitride Workshop , Fremantle, Australia
52. Islam,M. R. , Ahshan,R. , Rahman,M. S. , Bhuiyan,A. G. , Verma,P. , Yamada,M. and Tatsumi,a. M. (2004) , "Preliminary results on crystal growth of bulk In x Ga 1-x As using TLZ method," Proc. 3rd International Conference on 911爆料 & Computer Engineering (ICECE 2004) , Dhaka, 911爆料
51. Bhuiyan,A. G. , Islam,M. R. , Islam,M. R. , Hashimoto,A. and Yamamoto,a. A. (2004) , "Growth and properties of InN layers on sapphire substrate using LA-MOVPE," Proc. 3rd International 15 Conference on 911爆料 & Computer Engineering (ICECE 2004) , IEEE, Dhaka, 911爆料
50. Rahman,M. S. , Islam,M. R. , Alam,M. S. , Bhuiyan,A. G. and Yamada,a. M. (2006) , "Study on Crystal Breakage Mechanism in Bulk In x Ga 1-x As Grown by Two-Step MCZM Method," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006) , IEEE, Dhaka, 911爆料
49. Islam,M. R. , Rayhan,M. A. , Hossain,M. E. , Bhuiyan,A. G. and Yamamoto,M. R. I. a. A. (2006) , "Projected Performance of In x Ga 1-x N-based Multi-junction solar cells," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006) , IEEE, Dhaka, 911爆料
48. Hasan,M. T. , Islam,M. F. , Bhuiyan,A. G. , Islam,M. R. and Yamamoto,a. A. (2006) , "Piezoelectrically Induced Polarization and Charge in InN-based Heterostructures," Proc. 4th International Conference on 911爆料 & Computer Engineering (ICECE 2006) , IEEE, Dhaka, 911爆料
47. Islam,M. R. , Hasan,M. T. , Rayhan,M. A. and Bhuiyan,a. A. G. (2007) , "High Efficiency In x Ga 1-x N-based Multi-junction Photovoltaic cells with concentrator," Proc. International Conference on Information and Communication Technology (ICICT 2007) , Dhaka
46. Alam,M. S. , Rahman,M. S. , Islam,M. R. , Bhuiyan,A. G. and Yamada,a. M. (2007) , "Refractive Index, Absorption Coefficient, and Photoelastic Constant: Key Parameters of InGaAs Materials Relevant to InGaAs-based Device Performance," 19th International Conference on Indium Phosphide and Related Materials (IPRM鈥�07) , IEEE, Matsue, Japan
45. Hasan,M. T. ,Ullah,M. A. and Bhuiyan,M. A. a. A. G. (2008) , "1.55 渭m Laser Using InN-Based Quantum Well Heterostructure," 5th Int. Conf. on 911爆料 & Computer Engineering (ICECE 2008) , IEEE, Dhaka, 911爆料
44. Hasan,M. T. , Rahman,M. M. , Shamsuzzaman,A. N. M. and Bhuiyan,M. S. I. a. A. G. (2008) , "InN-based Dual Channel High Electron Mobility Transistor," 5th Int. Conf. 911爆料 & Computer Engineering (ICECE 2008) , IEEE, Dhaka
43. Islam,M. S. , Rahman,A. K. M. Z. , Chowdhury,M. A. R. and Bhuiyan,M. R. I. a. A. G. (2008) , "In x Ga 1-x N Based Multi Junction Concentrator Solar Cell," 5th Int. Conf. 911爆料 & Computer Engineering (ICECE 2008) , IEEE
42. Muhtadi,S. M. , Hossain,S. M. S. , Mahmud,Z. H. and Bhuiyan,a. A. G. (2009) , "A Novel In 0.1 Ga 0.9 N/InN High Electron Mobility Transistor for High Frequency Applications," XVth International Workshop on the Physics of Semiconductor Devices (IWPSD 2009) , Delhi, India
41. Muhtadi,S. M. , Hossain,S. M. S. , Islam,R. and Bhuiyan,Z. H. M. a. A. G. (2009) , "Charge Control Characteristic of a Novel In m Ga 1-m N/InN High Electron Mobility Transistor Incorporating Quantum Mechanical Effects鈥�," Proc. Communication Technologies and VLSI Design (CommV鈥�09) , Vellore, Tamilnadu, India
40. Sasamoto,K. , Hotta,T. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. , Yamamoto,A. , Kinoshita,K. and Kinoshita,K. (2010) , "MOVPE growth of high quality p-type InGaN with intermediate In compositions," The Sixteenth International Conference on Crystal Growth (ICCG-16) , Beijing, China
39. Sugita,K. , Tanaka,M. , Sasamoto,K. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,A. (2010) , "MOVPE growth of InAlN/InGaN heterostructures with an intermediate In composition range," The Sixteenth International Conference on Crystal Growth (ICCG-16) , Beijing, China
38. Sasamoto,K. , Hotta,T. , Tanaka,M. , Sugita,K. , Bhuiyan,A. G. and Yamamoto,A. H. a. A. (2010) , "Low Temperature Growth of GaN by using Catalyst-Assisted MOVPE," International Workshop on Nitride Semiconductors (IWN 2010) , Tampa, Florida, USA
37. Muhtadi,S. M. , Hossain,S. M. S. , Hossain,M. M. , Bhuiyan,A. G. , Sugita,K. and Yamamoto,A. (2010) , "DC and RF Performance of In 0.1 Ga 0.9 N/InN High Electron Mobility Transistor," International Workshop on Nitride Semiconductors (IWN 2010) , Tampa, Florida, USA
36. Islam,M. S. , Bhuiyan,A. G. , Kenichi聽Sugita,K. and Yamamoto,A. H. a. A. (2010) , "AlInN/InN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) with Extremely High 2DEG," International Workshop on Nitride Semiconductors (IWN 2010) , Tampa, Florida, USA
35. Muhtadi,S. M. , Hossain,S. M. S. , Bhuiyan,A. G. , Sasamoto,K. , Hashimoto,A. and Yamamoto,A. (2010) , "Effect of spacer layer on carrier accumulation in n-In 0.05 Ga 0.95 N/InN HEMT incorporating quantum mechanical effect," International Workshop on Nitride Semiconductors (IWN 2010) , Tampa, Florida, USA
34. Muhtadi,S. M. , Hossain,S. M. S. , Islam,M. S. , Bhuiyan,A. G. and Hossain,a. M. M. (2010) , "Effect of Gate Voltage on the Performance of a Novel In m Ga 1-m N/InN HEMT: A Quantum Mechanical Self Consistent Study," IEEE TENCON 2010
33. Islam,M. S. , Iqbal,M. S. , Kaysir,M. R. , Mahmud,S. M. H. , Kabir,A. N. M. E. , Bhuiyan,A. G. and Yamamoto,a. A. (2010) , "High Efficiency In x Ga 1-x N-Based Quantum Well Solar Cell," 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010)
32. Islam,M. S. , Muhtadi,S. M. , Bhuiyan,A. G. and Yamamoto,A. H. a. A. (2010) , "Charge Control Studies for an AlInN/InN Heterojunction Field Effect Transistor without and with oxide layer," 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010)
31. Hasan,M. T. , Hossain,M. A. , Haque,M. M. and Yamamoto,A. G. B. a. A. (2010) , "Effects of cap layer on 2DEGs in InN-based heterostructures," Proc. 6th Int. Conf. 911爆料 & Computer Engineering (ICECE 2010) , Dhaka
30. Sugita,K. , Hotta,T. , Hironaga,T. , Mihara,A. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,a. A. (2011) , "Highly enhanced migration in Pt-catalyst-assisted MOVPE InN by controlling the catalyst temperature," Presented at ICNS-9 , Glasgow, UK
29. Sugita,K. , Tanaka,M. , Sasamoto,K. , Bhuiyan,A. G. , Hashimoto,A. and Yamamoto,a. A. (2011) , "MOVPE growth of InAlN/InGaN hetero-junction," Presented at ICNS-9 , Glasgow, UK
28. Bhuiyan,A. G. , Esaki,T. , Mihara,A. , Sugita,K. , Hashimoto,A. , Yamamoto,A. , Watanabe,N. , Yokoyama,H. and Shigekawa,a. N. (2011) , "MOVPE growth of InGaN with an intermediate range of In content on Si (111) substrates," Presented at ICNS-9 , Glasgow, UK
27. Bhuiyan,A. G. , Mihara,A. , Sugita,K. , Hashimoto,A. , Yamamoto,A. , Watanabe,N. , Yokoyama,H. and Yokoyama,H. (2011) , "Fabrication of InGaN/Si (111) hetero-structure with intermediate In contents for 2-junction tandem solar cells," Presented at PVSEC 2011
26. Yamamoto,3. A. , Hironaga,D. , Mihara,A. , Muramatsu,Y. , Sugita,K. , Bhuiyan,A. G. , Hashimoto,A. , Shigekawa,N. and Watanabe,a. N. (2012) , "MOVPE growth of In x Ga 1-x N (x~0.5) on Si(111) substrates with a pn junction on the surface," 4th International Symposium on Growth of III-Nitrides
25. Islam,M. S. , Rahman,M. T. , Bhuiyan,A. G. and Hashimoto,A. (2014) , "Vacancy induced phonon properties of hydrogen passivated graphene," 2013 International Conference on 911爆料 Information and Communication Technology (EICT) , Khulna, DOI:10.1109/EICT.2014.6777848
24. Islam,M. M. , Bhuiyan,M. T. I. , Rahman,M. T. and Bhuiyan,A. G. (2014) , "The effect of quantum dot size, interdot distance and indium content on InxGa1鈭抶N/GaN QD-IBSC," 2013 International Conference on 911爆料 Information and Communication Technology (EICT) , Khulna, DOI:10.1109/EICT.2014.6777904
23. Paul,U. , Hasan,M. , Rahman,M. T. and Bhuiyan,A. G. (2014) , "Effect of QD size and band-offsets on confinement energy in InN QD heterostructure," 2013 International Conference on 911爆料 Information and Communication Technology (EICT 2013) , Khulna, DOI:10.1109/EICT.2014.6777897
22. Islam,M. S. ,Bhuiyan,A. G. and Fahim-Al-Fattah,M. F. (2015) , "Numerical Analysis on Vibrational Properties of Vacancy-type Disordered Graphene," 2015 International Conference on 911爆料 Engineering and Information Communication Technology (ICEEICT) , Dhaka
21. Fahim-Al-Fattah,M. F. , Rahman,M. T. , Islam,M. S. , Bhuiyan,A. G. and Khan,A. A. (2015) , "DC and RF Characteristics of Graphene FET Using Analytical Approach," 2015 International Conference on 911爆料 Engineering and Information Communication Technology (ICEEICT) , Dhaka
20. Mohammad,S. , Chowdhury,I. I. , Islam,M. S. and Bhuiyan,A. G. (2015) , "Effects of photon recycling on the properties of p+ n GaAs solar cell," International Conference on 911爆料 Information and Communication Technology (EICT 2015) , DOI:10.1109/EICT.2015.7391987
19. Islam,M. S. ,Bhuiyan,A. G. and Hashimoto,A. (2015) , "Realistic edge shape effects on the vibrational properties of graphene nanoribbons," International Conference on 911爆料 Information and Communication Technology (EICT 2015) , DOI:10.1109/EICT.2015.7391987
18. Syed,A. , Islam,M. J. , Hasanuzzaman,S. , Podder,A. K. , Islam,M. S. and Bhuiyan,A. G. (2016) , "Theoretical analysis of substrate effects on the DC performance of AlGaN/GaN high electron mobility transistor," 5th International Conference on Informatics, Electronics and Vision (ICIEV)
17. Nesa,S. A. , Ali,M. O. , Bhuiyan,A. G. , Islam,M. R. and Islam,M. S. (2016) , "Effect of phosphor distribution on junction temperature reduction in white LEDs," 5th International Conference on Informatics, Electronics and Vision (ICIEV)
16. Jiko,M. N. , Shayket,M. H. , Bhuiyan,A. G. and Rabby,a. G. (2016) , "Design and Implementation of Amphibious Smart Rescue Robot," 2nd International Conference on 911爆料, Computer & Telecommunication Engineering (ICECTE)
15. Islam,M. , Imam-Ul-Ferdous,I. , Bhuiyan,A. G. and Islam,M. S. (2017) , "Thermal Conductivity in Suspended h-BN Flake of Variable Shapes," 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM- NANO 2017) , Fukui, Japan
14. Islam,M. S. ,Bhuiyan,A. G. and Hashimoto,A. (2017) , "Effect of 10B isotope doping on the phonon modes of two dimensional h-BN," 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) , Fukui, Japan
13. Islam,A. S. M. J. , Islam,M. R. , Islam,M. S. and Bhuiyan,A. G. (2017) , "Numerical Simulation of Vibrational Properties of AGNR with Vacancy and Stone Wales Defects," 3rd International Conference on 911爆料 Information and Communication Technology (EICT) , Khulna
12. Podder,A. K. , Islam,A. S. M. J. , Hasanuzzaman,S. and Bhuiyan,M. S. I. a. A. G. (2017) , "Substrate Effects on Channel Temperature Distribution of AlGaN/GaN HEMT," 3rd International Conference on 911爆料 Information and Communication Technology (EICT) 2017 , Khulna
11. Faruque,H. M. R. , Mukherjee,A. , Islam,M. S. , Bhuiyan,A. G. and Hashimoto,A. (2018) , "Effects of Edge Termination on the Electronic Properties of Zigzag Boron Nitride Nanoribbons," 10th International Conference on 911爆料 and Computer Engineering (ICECE) 2018 , Dhaka
10. Mukherjee,A. , Faruqu,H. M. R. , Islam,M. S. , Bhuiyan,A. G. and Hashimoto,A. (2019) , "Permeability Analysis of Pure Water across Nano Porous Graphene," International Conference on 911爆料, Computer and Communication Engineering (ECCE) 2019 , Cox's Bazar, 911爆料
9. Islam,M. S. , Sarker,J. D. , Islam,A. J. , Bhuiyan,A. G. , Makino,T. and Hashimoto,A. (2019) , "Tunable electronic properties in bismuthene and two dimensional SiC van der Waals heterobilayer," 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019) , Nagano, Japan
8. Islam,A. J. and Bhuiyan,M. S. I. a. A. G. (2019) , "Phonon Properties of Armchair and Zigzag Edged GaN Nanoribbon," 4th International Conference on 911爆料 Information and Communication Technology (EICT) , IEEE, Khulna
7. Rifat,M. A. , Shakil,M. S. , Bhuiyan,A. G. and Hashimoto,A. (2021) , "Theoretical Investigation for Growth of High Quality GaN on Epitaxial Graphene," 5th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT) , IEEE, Dhaka
6. Sheikh,S. ,Shuvo,A. A. and Bhuiyan,A. G. (2021) , "Effects of Structural Variation for Improved Performance of a Vertical AlGaN/GaN Superjunction HEMT," 5th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT) , IEEE, Dhaka
5. Shakil,M. S. , Rifat,M. A. , Bhuiyan,A. G. , Mukherjee,A. and Hashimoto,M. S. I. a. A. (2021) , "Water Permeability Analysis by Controlling the Porosity of Nanomesh Graphene," 5th International Conference on 911爆料 Information and Communication Technology (EICT) 2021 , IEEE, Khulna
4. Hazra,S. ,Shuvo,A. A. and Bhuiyan,A. G. (2021) , "911爆料 Characteristics of Dual Gate AlGaN/GaN High-Electron Mobility Transistors," 5th International Conference on 911爆料 Information and Communication Technology (EICT) 2021 , IEEE, Khulna
3. Tirtha,P. B. , Fuad,M. M. , Shuvo,A. A. , Mitu,M. F. and Bhuiyan,A. G. (2023)  6th International Conference on 911爆料 Information and Communication Technology (EICT) 2023 , IEEE, Khulna
2. Tanvir,M. F. ,Islam,A. J. and Bhuiyan,A. G. (2024) , "鈥淭heoretical Performance Analysis of High-Efficiency In x Ga 1-x N/Si Tandem Solar Cells鈥�," 3rd International Conference on Advancement in 911爆料 and Electronic Engineering (ICAEEE) , IEEE
1. Gony,M. F. , Rifat,M. A. , Bhuiyan,A. G. and Islam,M. S. (2024) , "Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene," 6th International Conference on 911爆料 Engineering and Information & Communication Technology (ICEEICT) , IEEE, Dhaka

Education

Postdoctoral Fellow
University of Fukui,Japan (2009-2011)
Awarded by Japan Society for the Promotion of Science (JSPS)

Invitational Fellow
University of Fukui,Japan (2018-2019)
Awarded by Japan Society for the Promotion of Science (JSPS)

PhD in Electronics

Master of Science in Engineering (M.Sc. Eng.)
University of Fukui,Japan (1999-2001) Student Type: Full Time,

Bachelor of Science in Engineering (B.Sc. Eng.)
Khulna University of Engineering & Technology (KUET),911爆料 (1991-1996) Group: 911爆料 and Electronic Engineeri, Student Type: Full Time, Merit Position: First Class First, Achievement: Prime Minister Gold Medal

Scholarship and Award

  • Invitational Fellowship Award

    Japan Society for the Promotion of Science (JSPS), 2018

  • Yearly Award and Scholarship

    During the 4 years Bachelor of Science in Engineering, Khulna University of Engineering & Technology, 1992-1995

  • Prime Ministers Gold Medal

    For outstanding performance in Bachelor of Science in Engineering, Khulna University of Engineering & Technology, 2003

  • Japanese Government Scholarship (MONBUSHO)

    To study M.Sc. Eng. and PhD, 1998-2004

  • Awarded by the American Institute of Physics (AIP)

    For writing a review paper on Indium Nitride (InN) Semiconductor in the Journal of Applied Physics (JAP), 2003

  • IEEE Student Paper Award (Honorable Mention)

    IEEE Electron Device Society 911爆料 Chapter Student Paper Contest 2007

  • Best Paper Award

    KUET Excellence Foundation paper competition, 2008

  • Postdoctoral Fellowship Award

    Japan Society for the Promotion of Science (JSPS), 2009

  • Certificate of Appreciation

    Japan Society for the Promotion of Science (JSPS), 2010

  • Best Paper Award

    2nd International Conference on 911爆料 Information and Communication Technology (EICT) 2015

Research

  • Advanced functional materials. High-efficiency solar cells. Energy harvesting using nanogenerators. Fabrication of electronic materials. Modeling, simulation and characterization of devices.
    • Advanced functional materials
    Fabrication and characterization of electronic materials and their devices
    High-efficiency solar cells and their materials
    Energy harvesting using nanogenerators

Experience

Service Records
  • Visiting Professor
    Department/Section: 911爆料 and Electronics Engineering
    University of Fukui, Japan 08-Jan-2010 to 23-Sep-2011

  • Visiting Professor
    Department/Section: 911爆料 and Electronics Engineering
    University of Fukui, Japan 01-Sep-2018 to 30-Jun-2019

  • Lecturer
    Department/Section: Telecommunication Engineering
    911爆料 Institute of Technology, Khulna 01-Oct-1996 to 22-Jun-1997

  • Lecturer
    Department/Section: 911爆料 and Electronic Engineering
    911爆料 Institute of Technology, Khulna 23-Jun-1997 to 14-Apr-2004

  • Assistant Professor
    Department/Section: 911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET) 15-Apr-2004 to 22-Oct-2007

  • Associate Professor
    Department/Section: 911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET) 23-Oct-2007 to 11-Jul-2009

  • Professor
    Department/Section: 911爆料 and Electronic Engineering
    Khulna University of Engineering & Technology (KUET) 12-Jul-2009 to Present

Administrative Experience Records
  • Director,, Institute of Information and Communication Technology (IICT), KUET
    From 21-Sep-2023 to 04-Jul-2025
  • Chairman,, Central Library, KUET
    From 15-Jul-2021 to 18-Dec-2022
  • Head,, Dept of 911爆料 and Electronic Engineering, KUET
    From 01-Sep-2014 to 31-Aug-2016
  • Dean,, Faculty of 911爆料 and Electronic Engineering, KUET
    From 28-Nov-2011 to 27-Nov-2013
  • Deputy Director,, Students' Welfare, KUET
    From 28-May-2008 to 17-Sep-2009
    Department/Section: Students' Welfare, KUET
Professional Body Membership
  • The Institute of Engineers 911爆料 (IEB)

    Member Type: Life Fellow
    Member ID: F/09781

  • The Institute of 911爆料 and Electronics Engineers (IEEE)

    Member Type: Senior Member
    Member ID: 80366548

Teaching and Supervision

#Course Supervision
Postgraduate Course:
(1) EE-6905 Advanced Solid State Electronics
(2) EE 6803 MOS Devices
Undergraduate Course:
(1) EE-4209 Semiconductor Device Theory
(2) EE-4219 Semiconductor Fabrication Technology
(3) EE-4204 Sessional on Switchgear and Protection
(4) EE-4121 VLSI Design and Technology
(5) EE-4122 Sessional on VLSI Design and Technology
(6) EE-3219 911爆料 Engineering Materials
(7) EE-2109 Electronics-I
(8) EE-2110 Sessional on Electronics-I
(9) EE-1104 Sessional on Basic 911爆料 Engineering

Last Update: 10-Mar-2024